FDW258P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : - 12 V
Continuous Drain Current : 9 A
Package / Case : TSSOP-8
Configuration : Single Triple Drain Quad Source
Resistance Drain-Source RDS (on) : 11 m Ohms


Features:

9 A, 12 V.  R_DS(ON) = 11 m@ V_GS = 4.5 V
                          R_DS(ON) = 14 m@ V_GS = 2.5 V
                          R_DS(ON) = 20 m@ V_GS = 1.8 V
Rds ratings for use with 1.8 V logic
Low gate charge
High performance trench technology for extremely low R_DS(ON) 
Low profile TSSOP-8 package


Application

Load switch
Motor drive 
DC/DC conversion
Power management


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-12	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current Continuous (Note 1a) Pulsed	9	A
		50
PD	Total Power Dissipation (Note 1a) (Note 1b)	1.3	W
		0.6
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150

Description

This FDW258P P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power
management applications with a wide range of gate drive voltage (1.8V 8V).


Parameters:

Technical/Catalog Information	FDW258P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	11 mOhm @ 9A, 4.5V
Input Capacitance (Ciss) @ Vds	5049pF @ 5V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	73nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW258P FDW258P