MOSFET LOW_VOLTAGE
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 6 A | ||
Resistance Drain-Source RDS (on) : | 0.018 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | BGA | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
20 |
V |
VGSS |
Gate-Source Voltage |
±12 |
V |
ID |
Drain Current Continuous (Note 1a) |
6 |
A |
10 | |||
PD |
Power Dissipation (Steady State) (Note 1a) |
1.7 |
W |
TJ, TSTG |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ294N minimizes both PCB space and RDS(ON) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON) .
Technical/Catalog Information | FDZ294N |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 6A |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 6A, 4.5V |
Input Capacitance (Ciss) @ Vds | 670pF @ 10V |
Power - Max | 1.7W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 10nC @ 4.5V |
Package / Case | 9-BGA |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDZ294N FDZ294N FDZ294NDKR ND FDZ294NDKRND FDZ294NDKR |