FDZ294N

MOSFET LOW_VOLTAGE

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FDZ294N Picture
SeekIC No. : 00162774 Detail

FDZ294N: MOSFET LOW_VOLTAGE

floor Price/Ceiling Price

Part Number:
FDZ294N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 0.018 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : BGA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 6 A
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.018 Ohms
Package / Case : BGA


Features:

*  6 A, 20 V    RDS(ON) = 23 m @ VGS = 4.5 V  RDS(ON) = 34 m @ VGS = 2.5 V
*  Occupies only 2.25 mm2  of PCB area. Less than 50% of the area of a SSOT-6
*  Ultra-thin package:  less than 0.85mm height when mounted to PCB
*  Outstanding thermal transfer characteristics: 4 times better than SSOT-6
* Ultra-low Qg x RDS(ON) figure-of-merit
*  High power and current handling capability.



Application

*  Battery management 
* Battery protection



Specifications

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±12

V

ID

Drain Current Continuous (Note 1a)
Pulsed

6

A

10

PD

Power Dissipation (Steady State) (Note 1a)

1.7

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C




Description

Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ294N minimizes both PCB space and RDS(ON) .  This BGA MOSFET embodies a breakthrough in packaging  technology which enables the device to combine excellent thermal transfer characteristics, high  current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON) .  




Parameters:

Technical/Catalog InformationFDZ294N
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs23 mOhm @ 6A, 4.5V
Input Capacitance (Ciss) @ Vds 670pF @ 10V
Power - Max1.7W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs10nC @ 4.5V
Package / Case9-BGA
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDZ294N
FDZ294N
FDZ294NDKR ND
FDZ294NDKRND
FDZ294NDKR



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