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FGA90N30

Features: • High Current Capability• Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 20A• High Input ImpedanceSpecifications Symbol Description FGA90N30 Units VCES Collector-Emitter Voltage 300 V VCES Gate-Emitter Voltage ± 30 V IC Collector Current @ ...

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SeekIC No. : 004341444 Detail

FGA90N30: Features: • High Current Capability• Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 20A• High Input ImpedanceSpecifications Symbol Description FGA90N30 Units VCES C...

FGA90N30 Data Sheet

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Part Number:
FGA90N30
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

• High Current Capability
• Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 20A
• High Input Impedance


Specifications

Symbol Description FGA90N30 Units
VCES Collector-Emitter Voltage 300 V
VCES Gate-Emitter Voltage ± 30 V
IC Collector Current @ TC = 25°C 90 A
ICM Pulsed Collector Current (Note 1) @ TC = 25°C 220 A
PD Maximum Power Dissipation @ TC = 25°C 219 W
Maximum Power Dissipation @ TC = 100°C 87
Tj Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds		 300 °C
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj


Description

Employing Unified IGBT Technology, FGA90N30 provides low conduction and switching loss. FGA90N30 offers the optimum solution for PDP applications where low condution loss is essential.




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