FGL60N100BNTDTU, US $ 1.93-2.82 , Fairchild Semiconductor, FGL60N100BNTDTU DataSheet download, circuit diagram from SeekIC.com

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FGL60N100BNTDTU: IGBT Transistors HIGH_POWER

FGL60N100BNTDTU Data Sheet

US $ 1.93~2.82 / Piece | Get Latest Price

Part Number:: FGL60N100BNTDTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/27

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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	1000 V
Collector-Emitter Saturation Voltage :	1.5 V	Maximum Gate Emitter Voltage :	+/- 25 V
Continuous Collector Current at 25 C :	60 A	Gate-Emitter Leakage Current :	+/- 500 nA
Power Dissipation :	180 W	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-264-3	Packaging :	Tube

Description

Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 1.5 V
Continuous Collector Current at 25 C : 60 A
Maximum Gate Emitter Voltage : +/- 25 V
Power Dissipation : 180 W
Collector- Emitter Voltage VCEO Max : 1000 V
Package / Case : TO-264-3
Gate-Emitter Leakage Current : +/- 500 nA

Parameters:

Technical/Catalog Information	FGL60N100BNTDTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1000V
Current - Collector (Ic) (Max)	60A
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 60A
Power - Max	180W
Mounting Type	Through Hole
Package / Case	TO-264
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FGL60N100BNTDTU FGL60N100BNTDTU

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FGL60N100BNTDTU

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