IGBT Transistors HIGH_POWER
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Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A&...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1000 V | ||
| Collector-Emitter Saturation Voltage : | 1.5 V | Maximum Gate Emitter Voltage : | +/- 25 V | ||
| Continuous Collector Current at 25 C : | 60 A | Gate-Emitter Leakage Current : | +/- 500 nA | ||
| Power Dissipation : | 180 W | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-264-3 | Packaging : | Tube |
| Symbol | Description |
FGL60N100BNTD |
Units |
| VGES | Collector-Emitter Voltage |
1000 |
V |
| VGES | Gate-Emitter Voltage |
± 25 |
V |
| IC | Collector Current @ TC = 25°C |
60 |
A |
| Collector Current @ TC = 100°C |
42 |
A | |
| ICM (1) | Pulsed Collector Current |
120 |
A |
| IF | Diode Continuous Forward Current @ TC = 100°C |
15 |
A |
| PD | Maximum Power Dissipation @ TC = 25°C |
180 |
W |
| Maximum Power Dissipation @ TC = 100°C |
72 |
W | |
| TJ | Operating Junction Temperature |
-55 to +150 |
°C |
| Tstg | Storage Temperature Range |
-55 to +150 |
°C |
| TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
°C |
| Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing | Package Marking Convention** |
|---|---|---|---|---|---|---|---|---|
| FGL60N100BNTD | Full Production | RoHS Compliant | $4.24 | TO-264 | 3 | RAIL | TBD | Line 1: $Y (Fairchild logo) Line 2: G60N100 Line 3: BNTD&3 |
| FGL60N100BNTDTU | Full Production | RoHS Compliant | $4.32 | TO-264 | 3 | RAIL | TBD | Line 1: $Y (Fairchild logo) Line 2: G60N100 Line 3: BNTD&3 |
| * Fairchild 1,000 piece Budgetary Pricing |
| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Package marking information for product FGL60N100BNTD is available. Click here for more information . |
Trench insulated gate bipolar transistors (IGBTs)FGL60N100BNTD with NPT technology show outstanding performance in conductionand switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications
| Technical/Catalog Information | FGL60N100BNTD |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1000V |
| Current - Collector (Ic) (Max) | 60A |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
| Power - Max | 180W |
| Mounting Type | Through Hole |
| Package / Case | TO-264 |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FGL60N100BNTD FGL60N100BNTD |