FGL60N170D

Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A• High Input Impedance• Built-in Fast Recovery DiodeApplication•Home Appliance, Induction Heater, IH JAR, Micro Wave OvenSpecifications Symbol Description FGA25N120AND ...

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SeekIC No. : 004341470 Detail

FGL60N170D: Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A• High Input Impedance• Built-in Fast Recovery DiodeApplication•Home Appliance, In...

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Part Number:
FGL60N170D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/3/28

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Product Details

Description



Features:

• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode



Application

Home Appliance, Induction Heater, IH JAR, Micro Wave Oven


Specifications

Symbol
Description
FGA25N120AND
Units
VCES
Collector-Emitter Voltage
1700
V
VGES
Gate-Emitter Voltage
± 25
V
IC
Collector Current @ TC = 25°C
60
A
Collector Current @ TC = 100°C
30
A
ICM (1)
Pulsed Collector Current
180
A
IF
Diode Continuous Forward Current @ TC = 100°C
15
A
IFM
Diode Maximum Forward Current
150
A
PD
Maximum Power Dissipation @ TC = 25°C
200
W
Maximum Power Dissipation @ TC = 100°C
80
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds
300
°C



Description

Fairchild's Insulated Gate Bipolar Transistor (IGBT) FGL60N170D provides low conduction and switching losses.

FGL60N170D is designed for the Induction Heating applications.


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