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FGL60N100D

Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A• High Input Impedance• Built-in Fast Recovery DiodeApplication•Home Appliance, Induction Heater, IH JAR, Micro Wave OvenSpecifications Symbol Description FGA25N120AND ...

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SeekIC No. : 004341469 Detail

FGL60N100D: Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A• High Input Impedance• Built-in Fast Recovery DiodeApplication•Home Appliance, Ind...

FGL60N100D Data Sheet

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Part Number:
FGL60N100D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode


Application

•Home Appliance, Induction Heater, IH JAR, Micro Wave Oven


Specifications

Symbol
Description
FGA25N120AND
Units
VCES
 Collector-Emitter Voltage
1000
V
VGES
 Gate-Emitter Voltage
± 25
V
IC
 Collector Current @ TC = 25°C
60
A
Collector Current @ TC = 100°C
42
A
ICM (1)
 Pulsed Collector Current
120
A
IF
 Diode Continuous Forward Current @ TC = 100°C
15
A
PD
 Maximum Power Dissipation @ TC = 25°C
176
W
Maximum Power Dissipation @ TC = 100°C
70
W
TJ
 Operating Junction Temperature
-55 to +150
°C
Tstg
 Storage Temperature Range
-55 to +150
°C
TL
 Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds
300
°C



Description

Insulated Gate Bipolar Transistors (IGBTs) FGL60N100D with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications




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