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FP101

Features: · Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting.· The FP101 is formed with 2chips, one being equivalent to the 2SB1121 and the other the SB05-05CP, placed in one package.PinoutSpecifications Parameter ...

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SeekIC No. : 004342941 Detail

FP101: Features: · Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting.· The FP101 is formed with 2chips, one being equivalent to t...

FP101 Data Sheet

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Part Number:
FP101
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting.
· The FP101 is formed with 2chips, one being equivalent to the 2SB1121 and the other the SB05-05CP, placed in one package.




Pinout






Specifications

Parameter
Symbo
Conditions
Ratings
 Unit
[TR]
Collector-to-Base Voltage
VCBO
-30
 V
Collector-to-Emitter Votage
VCEO
-25
 V
Emitter-to-Base Voltage
VEBO
-6
 V
collector current
IC
-2
 A
Collector Current(Pulse)
ICP
-5
 A
Base current
IB
-400
 mA
Collector Dissipation
PC
Mounted on ceramic board 250mm2´0.8mm)
1.3
 W
Junction Temperature
TJ
150
 °C
[SBD]
Repetitive Peak Reverse Volatage
VRRM
50
 V
Non-repetitive Peak Reverse Surge Voltage
VRSM
55
 V
Average-rectified Current
IO
500
 Am
Surge Forward Current
IFSM
50HZ sine wav,1cycle
5
 A
Junction Temperature
Tj
-55to+125
 °C
Storage Temperature
Tstg
-55to+125
 °C


Absolute maximum ratings
VCEO [V] 25
IC [A] 2
PC [W] 1.3
When mounted on ceramic substrate (250mm²×0.8mm) 1unit
VRRM [V] 50
IO [A] 0.5
Electrical characteristics
hFE min 140
hFE max 560
VCE [V] 2
IC [A] 0.1
VCE (sat) typ [V] 0.35
VCE (sat) max [V] 0.6
IC [A] 1.5
IB [mA] 75
VF max [V] 0.55
IF [A] 0.5
IR max [mA] 0.05
VR [V] 25
trr max *typ [nS] 10
IF [A] 0.1





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