FPD10000AF

¹TAmbient = 22°C unless otherwise noted ²Max. RF Input Limit must be further limited if input V_SWR > 2.5:1
³Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
• Power Dissipation defined as: P_TOT (P_DC + P_IN) P_OUT, where
                                                   P_DC: DC Bias Power
                                                   P_IN: RF Input Power
                                                   P_OUT: RF Output Power
• Absolute Maximum Power Dissipation to be de-rated as follows above 22°C:
                                                   P_TOT=42 - (0.286W/°C) x T_PACK
where THS = heatsink or ambient temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 85°C heatsink temperature: P_TOT = 42 - (0.286 x (55 22)) = 32.6W
• The use of a filled via-hole directly beneath the exposed heatsink tab on the bottom of the package is strongly recommended to provide for adequate thermal management. Ideally the bottom of the circuit board is affixed to a heatsink or thermal radiator.

The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor(pHEMT), optimized for power applications in L-Band. The high power flangemount package has been optimized for low electrical parasitics and optimal heatsinking.

FPD10000AF applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers.