FPD1000AS

¹TAmbient = 22°C unless otherwise noted ²Max. RF Input Limit must be further limited if input V_SWR > 2.5:1
³Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
• Power Dissipation defined as: P_TOT (P_DC + P_IN) P_OUT, where
                                                   P_DC: DC Bias Power
                                                   P_IN: RF Input Power
                                                   P_OUT: RF Output Power
• Absolute Maximum Power Dissipation to be de-rated as follows above 22°C:
                                                   P_TOT=3.5 - (0.04W/°C) x T_PACK
where THS = heatsink or ambient temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 85°C heatsink temperature: P_TOT = 6.0 - (0.04 x (55 22)) = 4.68W
• For optimum heatsinking, metal-filled through (Source) via holes should be used directly below the central metallized ground pad on the bottom of the package.
• Note on Thermal Resistivity: The nominal value of 25°C/W is measured with the package mounted on a large heatsink with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to the Source leads.
• HANDLING PRECAUTIONS

The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor(pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics.

FPD1000AS applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers.