FQAF85N06

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 67 A
Package / Case : TO-3PF
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

* 67A, 60V, R_DS(on)  = 0.010  @V_GS  = 10 V
* Low gate charge ( typical 86 nC)
* Low Crss ( typical  165 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating


Pinout

Symbol	Parameter	FQAF85N06	Units
VDSS	Drain-Source Voltage	60	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	67	A
		47.4	A
IDM	Drain Current - Pulsed             (Note 1)	268	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	810	mJ
IAR	Avalanche Current                   (Note 1)	67	A
EAR	Repetitive Avalanche Energy         (Note 1)	10	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	7.0	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	100	W
		0.67	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+175
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These N-Channel enhancement mode power FQAF85N06 field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

    This advanced technology FQAF85N06 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQAF85N06 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.