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FQB25N33TM

MOSFET 330V N-Channel MOSFET

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SeekIC No. : 00163817 Detail

FQB25N33TM: MOSFET 330V N-Channel MOSFET

FQB25N33TM Data Sheet

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Part Number:
FQB25N33TM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 330 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 0.23 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 25 A
Drain-Source Breakdown Voltage : 330 V
Resistance Drain-Source RDS (on) : 0.23 Ohms


Parameters:

Technical/Catalog InformationFQB25N33TM
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)330V
Current - Continuous Drain (Id) @ 25° C25A
Rds On (Max) @ Id, Vgs230 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds 2010pF @ 25V
Power - Max3.1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs75nC @ 15V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQB25N33TM
FQB25N33TM
FQB25N33TMDKR ND
FQB25N33TMDKRND
FQB25N33TMDKR



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