FQB27N25TM_AM002

MOSFET 250V N-Channel QFET

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SeekIC No. : 00162768 Detail

FQB27N25TM_AM002: MOSFET 250V N-Channel QFET

floor Price/Ceiling Price

Part Number:
FQB27N25TM_AM002
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/3

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 25.5 A
Resistance Drain-Source RDS (on) : 0.11 Ohms Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.11 Ohms
Continuous Drain Current : 25.5 A


Parameters:

Technical/Catalog InformationFQB27N25TM_AM002
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C25.5A
Rds On (Max) @ Id, Vgs110 mOhm @ 12.75A, 10V
Input Capacitance (Ciss) @ Vds 2450pF @ 25V
Power - Max3.13W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs65nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQB27N25TM_AM002
FQB27N25TM_AM002



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