FQB4N50TM, US $ .35-.73 , Fairchild Semiconductor, FQB4N50TM DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00151902 Detail

FQB4N50TM: MOSFET N-CH/500V/3.4A/2.7OHM

FQB4N50TM Data Sheet

US $ .35~.73 / Piece | Get Latest Price

Part Number:: FQB4N50TM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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25~100
100~250

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$.73
$.61
$.43
$.35

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Recent History
What is this?

FQB4P40 evaluate
Features: • -3.5A, -400V, RDS(on) = 3.1Ω @VGS = -10 V• Low gate charge ( typical...
FQB4P25 evaluate
Features: • -4.0A, -250V, RDS(on) = 2.1Ω @VGS = -10 V• Low gate charge ( typical...
FQB4N90 evaluate
Features: • 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V• Low gate charge ( typicall...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	3.4 A
Resistance Drain-Source RDS (on) :	2.7 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-263
Continuous Drain Current : 3.4 A
Resistance Drain-Source RDS (on) : 2.7 Ohms

Parameters:

Technical/Catalog Information	FQB4N50TM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	3.4A
Rds On (Max) @ Id, Vgs	2.7 Ohm @ 1.7A, 10V
Input Capacitance (Ciss) @ Vds	460pF @ 25V
Power - Max	3.13W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQB4N50TM FQB4N50TM

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FQB4N50TM

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