MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Descriptions: MOSFET N-CH 200V 9A DPAK
2500
.30940
773.50
| Technical/Catalog Information | FQD12N20TM |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 9A |
| Rds On (Max) @ Id, Vgs | 280 mOhm @ 4.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 910pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 23nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQD12N20TM FQD12N20TM |
FQD10N20
PDF/DataSheet Download
MOSFET N-CH 200V 9A DPAK
MOSFET N-CH 200V 9A DPAK
The FQD12N20LTM is N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology. Features of the FQD12N20LTM are:(1)9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V;(2)low gate charge (typical 16 ...
MOSFET N-CH 200V 9A DPAK
These N-Channel enhancement mode power FQD12N20Lfield effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch...
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