FQD10N20CTM, US $ .27-.4 , Fairchild Semiconductor, FQD10N20CTM DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00148757 Detail

FQD10N20CTM: MOSFET N-CH/200V/10A/QFET

FQD10N20CTM Data Sheet

US $ .27~.4 / Piece | Get Latest Price

Part Number:: FQD10N20CTM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/27

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What is this?

FQD10N20C evaluate
Features: • 7.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V• Low gate charge ( typical 2...
FQD10N20CTF evaluate
MOSFET N-CH/200V/10A/QFET
FQD10N20CTM_F080 evaluate
MOSFET Trans MOS N-Ch 200V 7.8A 3-Pin 2+Tab

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	7.8 A
Resistance Drain-Source RDS (on) :	0.36 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	DPAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.36 Ohms
Continuous Drain Current : 7.8 A

Parameters:

Technical/Catalog Information	FQD10N20CTM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	7.8A
Rds On (Max) @ Id, Vgs	360 mOhm @ 3.9A, 10V
Input Capacitance (Ciss) @ Vds	510pF @ 25V
Power - Max	50W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	26nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQD10N20CTM FQD10N20CTM

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FQD10N20CTM

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