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FQD10N20CTM_F080

MOSFET Trans MOS N-Ch 200V 7.8A 3-Pin 2+Tab

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SeekIC No. : 00163926 Detail

FQD10N20CTM_F080: MOSFET Trans MOS N-Ch 200V 7.8A 3-Pin 2+Tab

FQD10N20CTM_F080 Data Sheet

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Part Number:
FQD10N20CTM_F080
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 7.8 A Resistance Drain-Source RDS (on) : 0.36 Ohms
Configuration : Single Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : DPAK
Packaging : Reel    

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 0.36 Ohms
Continuous Drain Current : 7.8 A


Parameters:

Technical/Catalog InformationFQD10N20CTM_F080
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C7.8A
Rds On (Max) @ Id, Vgs360 mOhm @ 3.9A, 10V
Input Capacitance (Ciss) @ Vds 510pF @ 25V
Power - Max50W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs26nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD10N20CTM_F080
FQD10N20CTM_F080



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