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MFG:FAIRC  Package Cooled:TO-252(DPAK)  D/C:09+  

FQD13N06 Product Image

FQD Series Datasheet download

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Part Number: FQD13N06

 

MFG: FAIRC

Package Cooled: TO-252(DPAK)

D/C: 09+

Description: These N-Channel enhancement mode power field effecttransistors are produced using Fairchild's propriet...


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FQD13N06 General Description


These N-Channel enhancement mode power field effecttransistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for low voltage applications such as DC/DCconverters, high efficiency switching for powermanagement in portable and battery operated products.

FQD13N06 Maximum Ratings

Symbol
Parameter
FQD13N06/FQU13N06
Units
VDSS
Drain-Source Voltage
60
V
ID
Drain Current- Continuous (TC = 25)
- Continuous (TC= 100)
10
A
6.3
A
IDM
Drain Current Pulsed  (Note 1)
40
A
VGSS
Gate-Source Voltage
± 25
V
EAS
Single Pulsed Avalanche Energy  (Note 2)
85
mJ
IAR
Avalanche Current   (Note 1)
10
A
EAR
Repetitive Avalanche Energy  (Note 1)
2.8
mJ
dv/dt
Peak Diode Recovery dv/dt  (Note 3)
7.0
V/ns
PD
Power Dissipation (TA = 25) *
2.5
W
Power Dissipation (TC = 25)
- Derate above 25
28
W
0.22
W/
TJ , TSTG
Operating and Storage Temperature Range
-55 to +150
TL
Maximumleadtemperature for soldering purposes,
1/8" from case for 5 seconds
300

FQD13N06 Features

10A, 60V, RDS(on)= 0.14 @VGS  = 10 V
Low gate charge ( typical 5.8 nC)
Low Crss ( typical  15 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

FQD13N06 datasheet

FQD13N06
PDF/DataSheet Download

  • Datasheet: FQD13N06
  • File Size: 675836 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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