MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Descriptions: MOSFET N-CH 60V 11A DPAK
2500
.20410
510.25
| Technical/Catalog Information | FQD13N06LTM |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 115 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 350pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 6.4nC @ 5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQD13N06LTM FQD13N06LTM |
FQD10N20
PDF/DataSheet Download
MOSFET N-CH 60V 11A DPAK
These N-Channel enhancement mode power FQD13N06Lfield effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switc...
These N-Channel enhancement mode power FQD13N06field effecttransistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.This advanced technology FQD13N06has been especially tailored tominimize on-state resistance, provide superior sw...
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