Position: Home  > All Categories> Integrated Circuits (ICs) > FQD13N10TM

FQD13N10TM

MOSFET 100V N-Ch QFET Logic Level

product image

FQD13N10TM Picture
See larger image
SeekIC No. : 00149223 Detail

FQD13N10TM: MOSFET 100V N-Ch QFET Logic Level

FQD13N10TM Data Sheet

floor Price/Ceiling Price

US $ .27~.48 / Piece | Get Latest Price
Part Number:
FQD13N10TM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.48
  • $.37
  • $.33
  • $.27
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/19

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.18 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 10 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 0.18 Ohms
Gate-Source Breakdown Voltage : +/- 25 V


Parameters:

Technical/Catalog InformationFQD13N10TM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs180 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds 450pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs16nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD13N10TM
FQD13N10TM



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Audio Products
HUC1002
WM-64CT
Kits
IT243
UVSC-110-4E1
Cables, Wires
821-0814-a
415-0100-150
Line Protection, Backups
BX0023
A20B-1008-0550
View more