FQD1N80TF

MOSFET 800V Single

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FQD1N80TF Picture
SeekIC No. : 00159795 Detail

FQD1N80TF: MOSFET 800V Single

floor Price/Ceiling Price

Part Number:
FQD1N80TF
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 15.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 15.5 Ohms


Parameters:

Technical/Catalog InformationFQD1N80TF
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C1A
Rds On (Max) @ Id, Vgs20 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 195pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs7.2nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD1N80TF
FQD1N80TF



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