FQD8P10TF_NB82052

MOSFET 100V P-Channel QFET

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SeekIC No. : 00161181 Detail

FQD8P10TF_NB82052: MOSFET 100V P-Channel QFET

floor Price/Ceiling Price

Part Number:
FQD8P10TF_NB82052
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6.6 A
Resistance Drain-Source RDS (on) : 0.53 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.53 Ohms
Drain-Source Breakdown Voltage : - 100 V
Continuous Drain Current : 6.6 A


Parameters:

Technical/Catalog InformationFQD8P10TF_NB82052
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C6.6A
Rds On (Max) @ Id, Vgs530 mOhm @ 3.3A, 10V
Input Capacitance (Ciss) @ Vds 470pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs15nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD8P10TF_NB82052
FQD8P10TF_NB82052



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