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FQI3N80

Features: • 3.0A, 800V, RDS(on) = 5.0Ω @VGS = 10 V• Low gate charge ( typical 15 nC)• Low Crss ( typical 7.0 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB3N80 / FQI3N80 Units VDSS ...

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SeekIC No. : 004343284 Detail

FQI3N80: Features: • 3.0A, 800V, RDS(on) = 5.0Ω @VGS = 10 V• Low gate charge ( typical 15 nC)• Low Crss ( typical 7.0 pF)• Fast switching• 100% avalanche tested• Imp...

FQI3N80 Data Sheet

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Part Number:
FQI3N80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 3.0A, 800V, RDS(on) = 5.0Ω @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 7.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB3N80 / FQI3N80
Units
VDSS Drain-Source Voltage
800
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
3.0
A
1.9
A
IDM Drain Current - Pulsed (Note 1)
12
A
VGSS Gate-Source Voltage
±30
V
EAS Single Pulsed Avalanche Energy (Note 2)
320
mJ
IAR Avalanche Current (Note 1)
3.0
A
EAR Repetitive Avalanche Energy (Note 1)
10.7
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.0
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
107
W
0.85
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors of FQI3N80 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQI3N80 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQI3N80 is well suited for high efficiency switch mode power supply.




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