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FQI4N90

Features: • 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V• Low gate charge ( typically 24 nC)• Low Crss ( typically 9.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB4N90 / FQI4N90 Units ...

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SeekIC No. : 004343295 Detail

FQI4N90: Features: • 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V• Low gate charge ( typically 24 nC)• Low Crss ( typically 9.5 pF)• Fast switching• 100% avalanche tested̶...

FQI4N90 Data Sheet

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Part Number:
FQI4N90
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V
• Low gate charge ( typically 24 nC)
• Low Crss ( typically 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB4N90 / FQI4N90
Units
VDSS Drain-Source Voltage
900
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
4.2
A
2.65
A
IDM Drain Current - Pulsed (Note 1)
16.8
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
570
mJ
IAR Avalanche Current (Note 1)
4.2
A
EAR Repetitive Avalanche Energy (Note 1)
14
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.0
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
140
W
1.12
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQI4N90 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQI4N90 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQI4N90 is well suited for high efficiency switch mode power supplies.




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