MOSFET N-CH/500V/5A/A.QFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 5 A | ||
Resistance Drain-Source RDS (on) : | 1.14 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Tube |
Technical/Catalog Information | FQI5N50CTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 5A |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 2.5A, 10V |
Input Capacitance (Ciss) @ Vds | 625pF @ 25V |
Power - Max | 73W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 24nC @ 10V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQI5N50CTU FQI5N50CTU |