FQI6N15TU, US $ .28-.61 , Fairchild Semiconductor, FQI6N15TU DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00151779 Detail

FQI6N15TU: MOSFET N-CH/150V/6.3A/0.65OHM

FQI6N15TU Data Sheet

US $ .28~.61 / Piece | Get Latest Price

Part Number:: FQI6N15TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/28

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Recent History
What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	150 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	6.4 A
Resistance Drain-Source RDS (on) :	0.6 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	I2PAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Package / Case : I2PAK
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.6 Ohms
Continuous Drain Current : 6.4 A

Parameters:

Technical/Catalog Information	FQI6N15TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	6.4A
Rds On (Max) @ Id, Vgs	600 mOhm @ 3.2A, 10V
Input Capacitance (Ciss) @ Vds	270pF @ 25V
Power - Max	3.75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	8.5nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQI6N15TU FQI6N15TU

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FQI6N15TU

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