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FQI6N90

Features: • 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V• Low gate charge ( typical 40 nC)• Low Crss ( typical 17 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB6N90 / FQI6N90 Units VDSS D...

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SeekIC No. : 004343316 Detail

FQI6N90: Features: • 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V• Low gate charge ( typical 40 nC)• Low Crss ( typical 17 pF)• Fast switching• 100% avalanche tested• Impr...

FQI6N90 Data Sheet

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Part Number:
FQI6N90
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB6N90 / FQI6N90
Units
VDSS Drain-Source Voltage
900
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
5.8
A
3.7
A
IDM Drain Current - Pulsed (Note 1)
23.2
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
712
mJ
IAR Avalanche Current (Note 1)
5.8
A
EAR Repetitive Avalanche Energy (Note 1)
16.7
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.0
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
167
W
1.34
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQI6N90 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQI6N90 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQI6N90 is well suited for high efficiency switch mode power supplies.




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