FQN1N60CTA, US $ .15-.24 , Fairchild Semiconductor, FQN1N60CTA DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00148277 Detail

FQN1N60CTA: MOSFET 600V NCH MOSFET

FQN1N60CTA Data Sheet

US $ .15~.24 / Piece | Get Latest Price

Part Number:: FQN1N60CTA
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/28

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What is this?

FQN1N50CBU evaluate
MOSFET N-CH/400V/5 A/.75OHM
FQN1N50CTA evaluate
US $.15 - .23 / Piece

MOSFET N-CH/400V/5 0A/0.075OHM
FQN1N60C evaluate
Features: ·0.3 A, 600 V, RDS(on) = 11.5 Ω @ VGS = 10 V· Low gate charge ( typical 4.8 nC )· ...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	0.3 A
Resistance Drain-Source RDS (on) :	9.3 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-92	Packaging :	Ammo

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-92
Continuous Drain Current : 0.3 A
Packaging : Ammo
Resistance Drain-Source RDS (on) : 9.3 Ohms

Parameters:

Technical/Catalog Information	FQN1N60CTA
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	300mA
Rds On (Max) @ Id, Vgs	11.5 Ohm @ 150mA, 10V
Input Capacitance (Ciss) @ Vds	170pF @ 25V
Power - Max	1W
Packaging	Tape & Box (TB)
Gate Charge (Qg) @ Vgs	6.2nC @ 10V
Package / Case	TO-92
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQN1N60CTA FQN1N60CTA FQN1N60CTATB ND FQN1N60CTATBND FQN1N60CTATB

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