MFG:FSC Package Cooled:TO-92L D/C:08+
MFG: FSC
Package Cooled: TO-92L
D/C: 08+
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
| Symbol | Parameter |
FQNL2N50B |
Units |
| VDSS | Drain-Source Voltage |
500 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
0.35 |
A |
|
0.22 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
1.4 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| IAR | Avalanche Current (Note 1) |
0.35 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
0.15 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
1.5 |
W |
|
0.012 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQNL2N50B
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