MFG:FSC Package Cooled:TO-220 D/C:04+
MFG: FSC
Package Cooled: TO-220
D/C: 04+
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
|
Symbol |
Parameter |
FQP10N20C |
FQPF10N20C
|
Units |
|
VDSS |
Drain-Source Voltage |
200 |
V | |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
9.5
|
9.5 *
|
A |
|
6.0 |
6.0 * |
A | ||
|
IDM |
Drain Current - Pulsed (Note 1) |
38 |
38 * |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
210 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
9.5 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
7.2 |
mJ | |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
72 |
38 |
W
|
|
0.57 |
0.3
|
W/ | ||
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C | |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C | |
FQP10N20C
PDF/DataSheet Download
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