FQP10N20L

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.36 Ohms


Features:

* 10A, 200V, R_DS(on)  = 0.36 @V_GS = 10 V
* Low gate charge ( typical 13 nC)
* Low Crss ( typical  14 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* Low level gate drive requirement allowing direct operation from logic drivers


Specifications

Symbol	Parameter	FQP10N20L	Units
VDSS	Drain-Source Voltage	200	V
ID	Drain Current  - Continuous (TC = 25) - Continuous (TC = 100)	10	A
		6.3	A
IDM	Drain Current - Pulsed (Note 1)	40	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy  (Note 2)	180	mJ
IAR	Avalanche Current  (Note 1)	10	A
EAR	Repetitive Avalanche Energy  (Note 1)	8.7	mJ
dv/dt	Peak Diode Recovery dv/dt  (Note 3)	5.5	V/ns
PD	Power Dissipation (TC = 25) - Derate above 25	87	W
		0.7	W/
TJ  , TSTG	Operating and Storage Temperature Range	-55 to +150
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

Description

  These N-Channel enhancement mode power FQP10N20L field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

  This advanced technology FQP10N20L is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. FQP10N20L is well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.