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FQP11N40

MOSFET 400V N-Channel QFET

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SeekIC No. : 00162335 Detail

FQP11N40: MOSFET 400V N-Channel QFET

FQP11N40 Data Sheet

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Part Number:
FQP11N40
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11.4 A
Resistance Drain-Source RDS (on) : 0.48 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 11.4 A
Resistance Drain-Source RDS (on) : 0.48 Ohms
Drain-Source Breakdown Voltage : 400 V


Parameters:

Technical/Catalog InformationFQP11N40
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25° C11.4A
Rds On (Max) @ Id, Vgs480 mOhm @ 5.7A, 10V
Input Capacitance (Ciss) @ Vds 1400pF @ 25V
Power - Max147W
PackagingTube
Gate Charge (Qg) @ Vgs35nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP11N40
FQP11N40



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