MFG:FAI Package Cooled:TO220-3 D/C:06+
MFG: FAI
Package Cooled: TO220-3
D/C: 06+
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's ...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supply, motor control.
| Symbol | Parameter | FQP12N20L | Units |
| VDSS | Drain-Source Voltage | 200 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC= 100) |
11.6 |
A |
| 7.35 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 46.4 | A |
| VGSS | Gate-Source Voltage | ± 20 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 210 |
mJ |
| IAR | Avalanche Current (Note 1) | 11.6 | A |
| EAR | Repetitive Avalanche Energy (Note 1) |
9.0 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
5.5 | V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
90 |
W |
| 0.72 | W/ | ||
| TJ , TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
FQP12N20L
PDF/DataSheet Download
These P-Channel enhancement mode power field effect transistors of FQP11P06are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior swi...
These N-Channel enhancement mode power FQP11N50CFfield effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior swit...
MOSFET N-CH 400V 10.5A TO-220
MOSFET N-CH 400V 11.4A TO-220
These N-Channel enhancement mode power FQP10N60Cfield effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.This advanced technology FQP10N60Chas been especially tailored to minimize on-state resistance, provide superi...
These N-Channel enhancement mode power FQP10N20Lfield effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology FQP10N20Lis especially tailored to minimize on-state resistance, provide superior s...
Price: 1.17-1.3 USD
PEROM, TSOP32, 3-volt, Single Supply Voltage, Software Protected Programming
Price: 200-250 USD
Xilinx XC4VFX60-11FF1152C, 1152FCBGA, Virtex®-4, 56880, 1.2 V
Price: 0.0452-0.052 USD
NPN Silicon RF Transistor, SOT-363, 12V, 8GHz, 175mW, RoHS Compliant
Price: 0.035-0.07 USD
LDO Voltage Regulator, SOT-25, 7.0 V, 500 mA, 100 mW
Price: 0.171-0.173 USD
250mA, low quiescent current LDO regulator, SOT23
Price: 0.55-1 USD
Glass Passivated Single-Phase Bridge Rectifier, 1000V, 35A, GBPB-4, Low thermal resistance
Price: 4-15 USD
GF-G07200-B-N-A3, BGA, NVIDIA Corporation
Price: 32-48 USD
IGBT module, 6MBI150UB-120-52, Fuji Electric
Price: 1-2.5 USD
Power MOSFET, TO-247, -12 A, 150 W, Dynamic dV/dt Rating, Fast Switching
Price: 25-60 USD
floating-point digital signal processor, BGA, -0.3 V to 2.3 V, 16Bit Host-Port Interface
Price: 23.3-25.5 USD
PW463A-10V BGA pixelworks
Price: 0.1-0.5 USD
voltage regulator, SOT23-5, –0.3 V to 13.5 V, Low-Dropout, Over Current Limitation
