FQP12N20L

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.28 Ohms
Continuous Drain Current : 11.6 A


Features:

* 11.6A, 200V, R_DS(on)  = 0.28 @V_GS = 10 V
* Low gate charge ( typical 16 nC)
* Low Crss ( typical  17 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* Low level gate drive requirement allowing direct opration from logic drivers


Specifications

Symbol	Parameter	FQP12N20L	Units
VDSS	Drain-Source Voltage	200	V
ID	Drain Current - Continuous (TC = 25) - Continuous (TC= 100)	11.6	A
		7.35	A
IDM	Drain Current - Pulsed (Note 1)	46.4	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy  (Note 2)	210	mJ
IAR	Avalanche Current  (Note 1)	11.6	A
EAR	Repetitive Avalanche Energy  (Note 1)	9.0	mJ
dv/dt	Peak Diode Recovery dv/dt  (Note 3)	5.5	V/ns
PD	Power Dissipation (TC = 25) - Derate above 25	90	W
		0.72	W/
TJ  , TSTG	Operating and Storage Temperature Range	-55 to +150
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

Description

  These N-Channel enhancement mode power field effect transistors of FQP12N20L are produced using Fairchild's proprietary,planar stripe, DMOS technology.

  This advanced technology of FQP12N20L has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP12N20L is well suited for high efficiency switching DC/DC converters,switch mode power supply, motor control.