MOSFET Trans MOS N-Ch 200V 19A 3-Pin 3+Tab
FQP19N20C_F080: MOSFET Trans MOS N-Ch 200V 19A 3-Pin 3+Tab
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 19.4 A | ||
Resistance Drain-Source RDS (on) : | 0.15 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Technical/Catalog Information | FQP19N20C_F080 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 19A |
Rds On (Max) @ Id, Vgs | 170 mOhm @ 9.5A, 10V |
Input Capacitance (Ciss) @ Vds | 1080pF @ 25V |
Power - Max | 139W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 53nC @ 10V |
Package / Case | TO-220 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQP19N20C_F080 FQP19N20C_F080 |