Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 900 V
Continuous Drain Current
: 2.8 A
Resistance Drain-Source RDS (on)
: 5.8 Ohms
Features: • 2.8A, 900V, RDS(on) = 5.8 @ VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
|
Symbol |
Parameter |
FQP2NA90 |
Units |
|
VDSS |
Drain-Source Voltage |
900 |
V |
|
ID |
Drain Current - Continuous (TC = 25) 2.8 A
- Continuous (TC = 100) |
2.8 |
A |
|
1.77 |
|
IDM |
Drain Current - Pulsed (Note 1) |
11.2 |
A |
|
VGSS |
Gate-Source Voltage |
±30 |
A |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
310 |
V |
|
IAR |
Avalanche Current (Note 1) |
2.8 |
mJ |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
10.7 |
A |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
|
PD |
Power Dissipation (TC = 25)
- Derate above 25
|
107 |
W |
|
0.85 |
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
W/ |
|
TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
|
DescriptionThese N-Channel enhancement mode power field effect transistors of FQP2NA90 are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQP2NA90 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP2NA90 is well suited for high efficiency switch mode power supply.
Parameters: | Technical/Catalog Information | FQP2NA90 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 2.8A |
| Rds On (Max) @ Id, Vgs | 5.8 Ohm @ 1.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 680pF @ 25V |
| Power - Max | 107W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP2NA90
FQP2NA90
|
FQP2NA90 Data Sheet
