MOSFET 900V N-Channel QFET
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 900 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 5.4 A | ||
| Resistance Drain-Source RDS (on) : | 2.3 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Tube |
| Symbol | Parameter |
FQP5N90 |
Units |
| VDSS | Drain-Source Voltage |
900 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
5.4 |
A |
|
3.42 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
21.6 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
660 |
mJ |
| IAR | Avalanche Current (Note 1) |
5.4 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
15.8 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
158 |
W |
|
1.27 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors of FQP5N90 are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQP5N90 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP5N90 is well suited for high efficiency switch mode power supply.
| Technical/Catalog Information | FQP5N90 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 5.4A |
| Rds On (Max) @ Id, Vgs | 2.3 Ohm @ 2.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 1550pF @ 25V |
| Power - Max | 158W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP5N90 FQP5N90 |