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MFG:TO-220  Package Cooled:7850  D/C:FAIRCHILD  

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Part Number: FQP6N40CF

 

MFG: TO-220

Package Cooled: 7850

D/C: FAIRCHILD

Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stri...


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FQP6N40CF General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.

FQP6N40CF Maximum Ratings

Symbol Parameter FQP6N40CF Units
VDSS Drain-Source Voltage 400 V
ID Drain Current - Continuous (TC = 25)           (Note 6)
                      - Continuous (TC = 100)         (Note 6)
6 A
3.6 A
IDM Drain Current - Pulsed                                    (Note 1) 24 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy                    (Note 2) 270 mJ
IAR Avalanche Current                                         (Note 1) 6 A
EAR Repetitive Avalanche Energy                         (Note 1) 73 mJ
dv/dt Peak Diode Recovery dv/dt                           (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25)
         - Derate above 25
73 W
0.58 W/
TJ , TSTG Operating and Storage Temperature Range -55 to +175
TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300

FQP6N40CF Features

• 6A, 400V, RDS(on) = 1.1 @VGS = 10 V
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 70ns)

FQP6N40CF datasheet

FQP6N40CF
PDF/DataSheet Download

  • Datasheet: FQP6N40CF
  • File Size: 1088949 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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