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SeekIC No. : 00160438 Detail

FQP6N90: MOSFET 900V N-Channel QFET

FQP6N90 Data Sheet

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Part Number:: FQP6N90
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2025/12/4

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	900 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	5.8 A
Resistance Drain-Source RDS (on) :	1.9 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 5.8 A
Resistance Drain-Source RDS (on) : 1.9 Ohms

Parameters:

Technical/Catalog Information	FQP6N90
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	5.8A
Rds On (Max) @ Id, Vgs	1.9 Ohm @ 2.9A, 10V
Input Capacitance (Ciss) @ Vds	1880pF @ 25V
Power - Max	167W
Packaging	Tube
Gate Charge (Qg) @ Vgs	52nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP6N90 FQP6N90

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FQP6N90

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