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Part Number: FQP7N80C

 

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Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...


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FQP7N80C General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

FQP7N80C Features

• 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQP7N80C Connection Diagram

Symbol
 Parameter
FQP7N80C
FQPF7N80C
Units
VDSS
Drain-Source Voltage
800
V
ID
 Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
6.6
6.6 *
A
4.2
4.2 *
A
IDM
 Drain Current - Pulsed (Note 1)
26.4
26.4 *
A
VGSS
 Gate-Source Voltage
± 30
V
EAS
 Single Pulsed Avalanche Energy (Note 2)
580
mJ
IAR
 Avalanche Current (Note 1)
6.6
A
EAR
 Repetitive Avalanche Energy (Note 1)
16.7
mJ
dv/dt
 Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD
 Power Dissipation (TC = 25°C)
- Derate above 25°C
167
56
W
1.33
0.44
W/°C
TJ, TSTG
 Operating and Storage Temperature Range
-55 to +150
°C
TL
 Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
°C
* Drain current limited by maximum junction temperature.

FQP7N80C datasheet

FQP7N80C
PDF/DataSheet Download

  • Datasheet: FQP7N80C
  • File Size: 868638 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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