Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220
Drain-Source Breakdown Voltage
: 80 V
Resistance Drain-Source RDS (on)
: 0.21 Ohms
Continuous Drain Current
: 9.3 A
Features: • 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V
• Low gate charge ( typical 4.7 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirements allowing direct operation from logic drivesSpecifications
| Symbol |
Parameter |
FQP9N08L |
Units |
| VDSS |
Drain-Source Voltage |
80 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
9.3 |
A |
|
6.57 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
37.2 |
A |
| VGSS |
Gate-Source Voltage |
± 20 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
55 |
mJ |
| IAR |
Avalanche Current (Note 1) |
9.3 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
4.0 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
6.5 |
V/ns |
| PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
40 |
W |
|
0.27 |
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese N-Channel enhancement mode power field effect transistors of FQP9N08L are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQP9N08L is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQP9N08L is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
Parameters: | Technical/Catalog Information | FQP9N08L |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25° C | 9.3A |
| Rds On (Max) @ Id, Vgs | 210 mOhm @ 4.65A, 10V |
| Input Capacitance (Ciss) @ Vds | 280pF @ 25V |
| Power - Max | 40W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 6.1nC @ 5V |
| Package / Case | TO-220 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP9N08L
FQP9N08L
|
FQP9N08L Data Sheet
