Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 600 V
Package / Case
: TO-220F
Continuous Drain Current
: 12 A
Resistance Drain-Source RDS (on)
: 0.65 Ohms
Features: • 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FQP12N60C /FQPF12N60C |
Units |
| VDSS |
Drain-Source Voltage |
600 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
12 |
12* |
A |
|
7.4 |
7.4* |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
48 |
48* |
A |
| VGSS |
Gate-Source Voltage |
± 30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
870 |
mJ |
| IAR |
Avalanche Current (Note 1) |
12 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
22.5 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
225 |
51 |
W |
|
1.78 |
0.41 |
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese N-Channel enhancement mode power field effect transistors of FQPF12N60C are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQPF12N60C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF12N60C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parameters: | Technical/Catalog Information | FQPF12N60C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 6A, 10V |
| Input Capacitance (Ciss) @ Vds | 2290pF @ 25V |
| Power - Max | 51W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 63nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF12N60C
FQPF12N60C
|
FQPF12N60C Data Sheet
