FQPF20N06L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 15.7 A
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220F
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.042 Ohms


Features:

* 15.7A, 60V, R_DS(on) = 0.055 @V_GS  = 10 V
* Low gate charge ( typical 9.5 nC)
* Low Crss ( typical  35 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQPF20N06L	Units
VDSS	Drain-Source Voltage	60	V
ID	Drain Current - Continuous (TC = 25) - Continuous (TC = 100)	15.7	A
		11.1	A
IDM	Drain Current - Pulsed (Note 1)	62.8	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy (Note 2)	170	mJ
IAR	Avalanche Current (Note 1)	15.7	A
EAR	Repetitive Avalanche Energy (Note 1)	3.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
PD	Power Dissipation (TC = 25) - Derate above 25	30	W
		0.2	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to +175
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

Description

  These N-Channel enhancement mode power field effect transistors of FQPF20N06L are produced using Fairchild's proprietary,planar stripe, DMOS technology.

  This advanced technology of FQPF20N06L has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF20N06L is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Parameters:

Technical/Catalog Information	FQPF20N06L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	15.7A
Rds On (Max) @ Id, Vgs	55 mOhm @ 7.85A, 10V
Input Capacitance (Ciss) @ Vds	630pF @ 25V
Power - Max	30W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 5V
Package / Case	TO-220F
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF20N06L FQPF20N06L