FQPF58N08

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Continuous Drain Current : 35 A
Package / Case : TO-220F
Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.024 Ohms


Features:

• 35A, 80V, RDS(on) = 0.024Ω @VGS = 10 V
• Low gate charge ( typical 50 nC)
• Low Crss ( typical 120 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQPF58N08	Units
VDSS	Drain-Source Voltage	80	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	35	A
		24.7	A
IDM	Drain Current - Pulsed (Note 1)	140	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	560	mJ
IAR	Avalanche Current (Note 1)	35	A
EAR	Repetitive Avalanche Energy (Note 1)	5.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	55	W
		0.37	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQPF58N08 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQPF58N08 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQPF58N08 is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.