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FQPF6N80CT

MOSFET 800V N-Ch Adv Q-FET C-Series

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SeekIC No. : 00149402 Detail

FQPF6N80CT: MOSFET 800V N-Ch Adv Q-FET C-Series

FQPF6N80CT Data Sheet

floor Price/Ceiling Price

US $ .61~.85 / Piece | Get Latest Price
Part Number:
FQPF6N80CT
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.85
  • $.76
  • $.68
  • $.61
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 5.5 A
Resistance Drain-Source RDS (on) : 2.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 5.5 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 2.5 Ohms


Parameters:

Technical/Catalog InformationFQPF6N80CT
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C5.5A
Rds On (Max) @ Id, Vgs2.5 Ohm @ 2.75A, 10V
Input Capacitance (Ciss) @ Vds 1310pF @ 25V
Power - Max51W
PackagingTube
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF6N80CT
FQPF6N80CT



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