FQPF90N08

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Continuous Drain Current : 44 A
Package / Case : TO-220F
Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.016 Ohms


Features:

• 44A, 80V, RDS(on) = 0.016Ω @VGS = 10 V
• Low gate charge ( typical 84 nC)
• Low Crss ( typical 200 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQPF90N08	Units
VDSS	Drain-Source Voltage	80	V
ID	Drain Current - Continuous (TC = 25) - Continuous (TC = 100)	44	A
		31.1	A
IDM	Drain Current - Pulsed (Note 1)	176	A
VGSS	Gate-Source Voltage	±25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1360	mJ
IAR	Avalanche Current (Note 1)	44	A
EAR	Repetitive Avalanche Energy (Note 1)	6.2	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.5	V/ns
PD	Power Dissipation (TC = 25) - Derate above 25	62	W
		0.41	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +175
TL	Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds	300

Description

These N-Channel enhancement mode power field effect transistors of FQPF90N08 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQPF90N08 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQPF90N08 is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.