MFG:FAIRCHILD Package Cooled:TO-220 D/C:05+
MFG: FAIRCHILD
Package Cooled: TO-220
D/C: 05+
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar s...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
| Symbol | Parameter | FQPF9N30 | Units |
| VDSS | Drain-Source Voltage | 80 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
7.0 | A |
| 4.95 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 28 | A |
| VGSS | Gate-Source Voltage | ± 20 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 55 | mJ |
| IAR | Avalanche Current (Note 1) | 7.0 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 2.3 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 6.5 | V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
23 |
W |
| 0.15 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +175 | |
| TL | Maximum lead temperature for soldering purposes, 1/8' from case for 5 seconds |
300 |
FQPF9N08L
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