MOSFET 600V N-Channel Adv Q-FET C-Series
FQU2N60CTLTU: MOSFET 600V N-Channel Adv Q-FET C-Series
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Features: 17.2A, 60V, RDS(on)= 0.06 @ VGS= 10VLow gate charge ( typical 9.5 nC)Low Crss ( typical ...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 1.9 A | ||
| Resistance Drain-Source RDS (on) : | 4.7 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | IPAK | Packaging : | Tube |