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FQU3P20

Features: • -2.4A, -200V, RDS(on) = 2.7Ω @VGS = -10 V• Low gate charge ( typical 6.0 nC)• Low Crss ( typical 7.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD3P20 / FQU3P20 Units VDSS D...

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SeekIC No. : 004343382 Detail

FQU3P20: Features: • -2.4A, -200V, RDS(on) = 2.7Ω @VGS = -10 V• Low gate charge ( typical 6.0 nC)• Low Crss ( typical 7.5 pF)• Fast switching• 100% avalanche tested•...

FQU3P20 Data Sheet

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Part Number:
FQU3P20
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• -2.4A, -200V, RDS(on) = 2.7Ω @VGS = -10 V
• Low gate charge ( typical 6.0 nC)
• Low Crss ( typical  7.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter FQD3P20 / FQU3P20 Units
VDSS Drain-Source Voltage -200 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 -2.4 A
-1.52 A
IDM Drain Current - Pulsed (Note 1) -9.6 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 150 mJ
IAR Avalanche Current (Note 1) -2.4 A
EAR Repetitive Avalanche Energy (Note 1) 3.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns
PD Power Dissipation (TA = 25) * 2.5 W
Power Dissipation (TC = 25)
- Derate above 25		 37 W
0.29 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds		 300  



Description

    These P-Channel enhancement mode power field effect transistors of FQU3P20 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology of FQU3P20 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU3P20 is well suited for high efficiency switching DC/DC converters.




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