MFG:FAIRC Package Cooled:TO-251(IPAK) D/C:09+
MFG: FAIRC
Package Cooled: TO-251(IPAK)
D/C: 09+
Description: These P-Channel enhancement mode power field effect transistors are produced using ...
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
| Symbol | Parameter | FQD3P20 / FQU3P20 | Units |
| VDSS | Drain-Source Voltage | -200 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
-2.4 | A |
| -1.52 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | -9.6 | A |
| VGSS | Gate-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 150 | mJ |
| IAR | Avalanche Current (Note 1) | -2.4 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 3.7 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | -5.5 | V/ns |
| PD | Power Dissipation (TA = 25) * | 2.5 | W |
| Power Dissipation (TC = 25) - Derate above 25 |
37 | W | |
| 0.29 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8from case for 5 seconds |
300 |
FQU3P20
PDF/DataSheet Download
MOSFET N-CH 600V 2.4A IPAK
MOSFET N-CHAN 600V 2.4A IPAK
These N-Channel enhancement mode power field effect transistors of FQU3N60are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology of FQU3N60has been especially tailored to minimize on-state resistance, provide su...
MOSFET N-CH 500V IPAK
These P-Channel enhancement mode power field effect transistors of FQU3N50Care produced using Fairchild's proprietary, planar stripe, DMOS technology.This advanced technology of FQU3N50Cis especially tailored to minimize on-state resistance, provide superior...
MOSFET N-CH 400V 2A IPAK
Price: 1.1-1.5 USD
aluminum electrolytic capacitor, 820UF, 200V, LGU2D821MELB, Nichicon
Price: 1-2 USD
NF-430-N-A2, NVIDIA Corporation, QFP, Integrated Circuits
Price: 65.7-68 USD
LCD, 14.1 SXGA+ Matte LCD, LTN141P4-L02, Samsung semiconductor
Price: 0.069-0.11 USD
DIP-14, low power, low offset voltage, quad comparator, Wide supply voltage range, 0.8 mA, 1050 mW
Price: 0.1-100 USD
solid tantalum, chip capacitor, smd, 1μF, case sizes, 35V, Low profile
Price: 0.35-0.45 USD
IC driver, half bridge, 600V, 8SOIC, Internal set deadtime, 1.0W, Floating channel
Price: 2-4 USD
IC AVR MCU 32K 8MHZ 3V 44TQFP - ATMEGA32L-8AU
Price: 1-10 USD
Low-Side Switch, PDSO-8, 4.5 V ~ 60 V, 480 mOhm, 550mA, BTS3408G
Price: 3-7 USD
Thick-Film, Hybrid IC, 3-channel, class AB, audio power IC, HYB-19, 80W to 150W, -0.3 to +5.5 V
Price: 1.58-1.85 USD
System-on-a-Chip MCU, fully integrated mixed-signal, -0.3 to 5.8 V, 500 mA, LQFP32
Price: 0.1-0.15 USD
Schottky Barrier Diode, SOD-923, Low Forward Voltage Drop, Fast switching, 30V
Price: 0.437-0.499 USD
line driver/receiver, 16-DIP, -0.3V to +6V, EIA/TIA-232E, ±15V
