Position: Home  > All Categories> Integrated Circuits (ICs) > FQU3P20

FQU3P20

Features: • -2.4A, -200V, RDS(on) = 2.7Ω @VGS = -10 V• Low gate charge ( typical 6.0 nC)• Low Crss ( typical 7.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD3P20 / FQU3P20 Units VDSS D...

product image

FQU3P20 Picture
See larger image
SeekIC No. : 004343382 Detail

FQU3P20: Features: • -2.4A, -200V, RDS(on) = 2.7Ω @VGS = -10 V• Low gate charge ( typical 6.0 nC)• Low Crss ( typical 7.5 pF)• Fast switching• 100% avalanche tested•...

FQU3P20 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQU3P20
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/22

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• -2.4A, -200V, RDS(on) = 2.7Ω @VGS = -10 V
• Low gate charge ( typical 6.0 nC)
• Low Crss ( typical  7.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter FQD3P20 / FQU3P20 Units
VDSS Drain-Source Voltage -200 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 -2.4 A
-1.52 A
IDM Drain Current - Pulsed (Note 1) -9.6 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 150 mJ
IAR Avalanche Current (Note 1) -2.4 A
EAR Repetitive Avalanche Energy (Note 1) 3.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns
PD Power Dissipation (TA = 25) * 2.5 W
Power Dissipation (TC = 25)
- Derate above 25		 37 W
0.29 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds		 300  



Description

    These P-Channel enhancement mode power field effect transistors of FQU3P20 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology of FQU3P20 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU3P20 is well suited for high efficiency switching DC/DC converters.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Transformers
TM-09210
BV222-1-00992
Filters
PICO2205A
PICO2204A
RF and RFID
X3C26P1-30S
1P620S
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Memory Cards, Modules
WT32
VTL5C7
Undefined Category
VI-B63-IU
X27 589
View more