MFG:FAIRC Package Cooled:TO-251(IPAK) D/C:09+
MFG: FAIRC
Package Cooled: TO-251(IPAK)
D/C: 09+
Description: These P-Channel enhancement mode power field effect transistors are produced using ...
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
| Symbol | Parameter | FQD6P25 / FQU6P25 | Units |
| VDSS | Drain-Source Voltage | -250 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
-4.7 | A |
| -3.0 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | -18.8 | A |
| VGSS | Gate-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 540 | mJ |
| IAR | Avalanche Current (Note 1) | -4.7 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 5.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | -5.5 | V/ns |
| PD | Power Dissipation (TA = 25) * | 2.5 | W |
| Power Dissipation (TC = 25) - Derate above 25 |
55 | W | |
| 0.44 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds |
300 |
FQU6P25
PDF/DataSheet Download
MOSFET N-CH 500V 4.5A IPAK
These N-Channel enhancement mode power field effect transistors of FQU6N50Care produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology of FQU6N50Chas been especially tailored to minimize on-state resistance, provide ...
MOSFET N-CH 400V 4.5A IPAK
MOSFET N-CH 400V 4.5A IPAK
These N-Channel enhancement mode power field effect transistorsof FQU6N40Care produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology of FQU6N40C has been especially tailored to minimize on-state resistance, provide ...
MOSFET N-CH 250V 4.4A IPAK
Price: 0.1-0.1 USD
Field-Programmable Gate Array, BGA, –0.5 to 1.32 V Internal supply voltage, 90-nanometer process t...
Price: 1-3 USD
ADPCM transcoder, 64 kbps voice PCM serial data, 32 kbps ITU-T G.721 ADPCM serial data, full-duple...
Price: 0.17-0.5 USD
capacitor, SMD, Surface Mount, 16.0 V, 2 pins, RoHS Compliant, 10.0 μF, AVX Corporation
Price: 0.15-0.2 USD
miniaturized receiver, infrared remote control, transmission codes
Price: 4-5 USD
XV-3700CB, EPSON gyroscope
Price: 2.2-3 USD
Incorporating, Clock Generator, Output and FTDIChip-ID, Security Dongle, SSOP-28, 5V
Price: 1-2 USD
Alarm Real-Time Clock, TSSOP, -0.5V to +7.0V
Price: 18-20 USD
NPN SILICON RF POWER TRANSISTOR BLW60C Philips
Price: 0.6-0.9 USD
transistor, -230V, silicon PNP triple diffused type, 15A, High collector voltage, TO-3P, Toshiba ...
Price: 3.9-4 USD
Layer 2 managed switch, 128PQFP, –0.5V to 2.4V, low port count, cost-sensitive
Price: 28-60 USD
power transistor module, 1200V, 1380W, 3A, high voltage, free wheeling diode, insulated type
Price: 0.09-0.1 USD
P-Channel, 2.5V, PowerTrench Specified MOSFET, low RDS(ON), Low gate charge, SOT-23, 10nC
