Purchase FQU7N20L, In-stock FQU7N20L From SeekIC.
MFG:KA Package Cooled:TO-


Part Number: FQU7N20L
MFG: KA
Package Cooled: TO-
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
MFG:KA Package Cooled:TO-


MFG: KA
Package Cooled: TO-
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
|
Symbol |
Parameter |
FQD7N20L / FQU7N20L |
Units | |
|
VDSS |
Drain-Source Voltage |
500 |
V | |
|
ID |
Drain Current |
- Continuous (TC = 100°C) |
5.5 |
A |
|
|
- Continuous (TC = 25°C) |
3.48 |
A | |
|
IDM |
Drain Current Pulsed (Note 1) |
22 |
A | |
|
VGSS |
Gate-Source Voltage |
± 20 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
73 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
5.5 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
4.5 |
mJ | |
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD TJ, TSTG |
Power Dissipation (TA = 25°C) |
2.5 |
W | |
|
Power Dissipation (TC = 25°C) |
45 |
W | ||
|
0.67 | ||||
|
Operating and |
-55 to +150 |
°C | ||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C | |
FQU7N20L
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