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MFG:KA  Package Cooled:TO-  

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Part Number: FQU7N20L

 

MFG: KA

Package Cooled: TO-

 

Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...


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FQU7N20L General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.

FQU7N20L Maximum Ratings

   

Symbol

Parameter

FQD7N20L / FQU7N20L

Units

VDSS

Drain-Source Voltage

500

V

ID

Drain Current

- Continuous (TC = 100°C)

5.5

A

 

- Continuous (TC = 25°C)

3.48

A

IDM

Drain Current Pulsed                     (Note 1)

22

A

VGSS

Gate-Source Voltage

± 20

V

EAS

Single Pulsed Avalanche Energy            (Note 2)

73

mJ

IAR

Avalanche Current                         (Note 1)

5.5

A

EAR

Repetitive Avalanche Energy                (Note 1)

4.5

mJ

d v/dt

Peak Diode Recovery dv/dt                  (Note 3)

5.5

V/ns

PD

TJ, TSTG

Power Dissipation (TA = 25°C)

2.5

W

Power Dissipation (TC = 25°C)
- Derate above 25°C

45

W
W/°C

0.67

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds

300

°C

FQU7N20L Features

• 5.5A, 200V, RDS(on) = 0.75 @VGS = 10 V
• Low gate charge ( typical 6.8 nC)
• Low Crss ( typical 8.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct operation from logic drivers

FQU7N20L datasheet

FQU7N20L
PDF/DataSheet Download

  • Datasheet: FQU7N20L
  • File Size: 584663 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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